From nuclear physics to semiconductor manufacturing: the making of ion implantation

Abstract

This article examines the emergence of ion implantation as a major semiconductor manufacturing process from the early 1960s through the late 1970s. Ion implantation techniques originated in nuclear physics research and were first employed to make solar cells for military satellites at the Ion Physics Corporation (IPC). This work at IPC inspired a research group at Sprague Electric to use ion implantation techniques to make transistors. Sprague's process development work, and its key finding that ion implantation enabled the control of critical transistor characteristics, were both exploited by Mostek, a semiconductor start‐up funded by Sprague. Mostek's engineers incorporated ion implantation into their manufacturing process to produce a string of integrated circuits that other firms could not make. Mostek's market success encouraged semiconductor firms to embrace ion implantation in the early and mid 1970s. By the end of the decade, ion implantation was used in the manufacture of virtually all advanced integrated circuits. This article improves our understanding of the development and adoption of semiconductor, and more generally high technology, manufacturing processes. It also advances our knowledge of the ways in which new technologies developed in the Cold War context made their way into the manufacturing economy.

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