New methods for determining the void content of silicon single crystals

Abstract

Two methods are proposed to determine upper limits to the total void volume in silicon single crystals. Both are based on the fast interstitial diffusion of metals (Cu, in particular) in Si. The first method is based on measuring the total area of the cavity walls by forming a metal monolayer on them. The second method is based on filling the cavities with silicide precipitates. These upper limits may be useful in assessing the uncertainties in the determination of the Avogadro constant from the molar volume of silicon.

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